ZnO p-n homojunctions and ohmic contacts to Al-N-co-doped p-type ZnO

Journal Article · Mon Aug 29 00:00:00 EDT 2005 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2012521· OSTI ID:20709740

Zhuge, F; Zhu, L P; Ye, Z Z; Ma, D W; Lu, J G; Huang, J Y; Wang, F Z; Ji, Z G; Zhang, S B ^[1]

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1. State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027 (China)

ZnO p-n homojunctions were fabricated on quartz substrates by depositing Al-doped n-type ZnO layer on Al-N-co-doped p-type ZnO layer through reactive magnetron sputtering. In/Zn metal contacts to as-grown ZnO show ohmic behavior, and the ohmic contacts can be improved by annealing in an Ar ambient. The optimal annealing temperatures for Al-N-co-doped ZnO and Al-doped ZnO are 550 deg. C and 600 deg. C, respectively. The p-n junction characteristic is confirmed by current-voltage measurements. The turn-on voltage is 2 V, with a low leakage current under reverse bias. Series resistances of the ZnO p-n junctions can be lowered by optimizing the annealing temperature, increasing the grain size of the ZnO, or increasing the hole concentration of the p layer.

• OSTI ID: 20709740
• Journal Information: Applied Physics Letters, Vol. 87, Issue 9; Other Information: DOI: 10.1063/1.2012521; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM IONS
ANNEALING
CRYSTAL GROWTH
DEPOSITION
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
ELECTRIC POTENTIAL
GRAIN SIZE
HALL EFFECT
HOMOJUNCTIONS
LAYERS
LEAKAGE CURRENT
NITROGEN IONS
P-N JUNCTIONS
QUARTZ
SEMICONDUCTOR MATERIALS
SPUTTERING
TEMPERATURE RANGE 0400-1000 K
THIN FILMS
ZINC OXIDES