Interaction of nitrogen with vacancy defects in N{sup +}-implanted ZnO studied using a slow positron beam

Journal Article · Mon Aug 29 04:00:00 EDT 2005 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2037847· OSTI ID:20709738

Chen, Z Q; Maekawa, M; Kawasuso, A; Suzuki, R; Ohdaira, T ^[1]

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1. Advanced Science Research Center, Japan Atomic Energy Research Institute, 1233 Watanuki, Takasaki, Gunma 370-1292 (Japan)

ZnO crystals were implanted with N{sup +}, O{sup +}, and Al{sup +}, and co-implanted with O{sup +}/N{sup +} and Al{sup +}/N{sup +} ions. Positron annihilation measurements indicate introduction of vacancy clusters upon implantation. In the N{sup +}-implanted and Al{sup +}/N{sup +} co-implanted samples, these vacancy clusters are only partially annealed at 800 deg. C, as compared with their entire recovery in the O{sup +}- and Al{sup +}-implanted samples at 800-900 deg. C, suggesting a strong interaction between nitrogen and vacancy clusters. However, in the O{sup +}/N{sup +} co-implanted sample, most vacancy clusters disappear at 800 deg. C. Probably oxygen scavenges nitrogen to enhance the annealing of the vacancy clusters. Upon further annealing at 1000-1100 deg. C, nitrogen also forms stable complexes with thermally generated vacancies. These nitrogen-related vacancy complexes need high-temperature annealing at 1200-1250 deg. C to be fully removed.

• OSTI ID: 20709738
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 9 Vol. 87; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM IONS
ANNEALING
ANNIHILATION
ION IMPLANTATION
NITROGEN
NITROGEN IONS
OXYGEN
OXYGEN IONS
POSITRON BEAMS
POSITRONS
SEMICONDUCTOR MATERIALS
TEMPERATURE RANGE 1000-4000 K
VACANCIES
ZINC OXIDES