Intersubband transitions in proton irradiated InGaAs/GaAs multiple quantum dots
- Department of Electrical Engineering, 3217 Bell Engineering Center, University of Arkansas, Fayetteville, Arkansas 72701 (United States)
The optical absorbance spectra of the intersubband transition in 3 MeV proton irradiated In{sub 0.3}Ga{sub 0.7}As/GaAs multiple quantum dot samples, cut from the same wafer, were investigated as a function of irradiation dose. The intensity of the intersubband transition is observed to decrease as the irradiation dose is increased. The behavior of the intersubband transition in irradiated In{sub 0.3}Ga{sub 0.7}As/GaAs multiple quantum dot samples is compared to those of intersubband transitions in irradiated GaAs/AlGaAs and InGaAs/InAlAs multiple quantum well samples. The intersubband transition absorbance spectrum was completely depleted in a multiple quantum dot sample irradiated with 5x10{sup 14} cm{sup -2}. Post-irradiation thermal annealing was performed on the latter sample where thermal annealing recovery of the depleted intersubband transition was not observed. Instead, a broadband with a peak at 5 {mu}m is observed after annealing the sample at 500 deg. C for 15 min. The absence of the broadband in an unirradiated sample that was subject to the same annealing conditions suggests that this band may be related to irradiation-induced defects.
- OSTI ID:
- 20709737
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 9 Vol. 87; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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