Effect of Y doping and composition-dependent elastic strain on the electrical properties of (Ba,Sr)TiO{sub 3} thin films deposited at 520 deg. C

Journal Article · Mon Nov 07 04:00:00 EST 2005 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2125113· OSTI ID:20706457

Wang, R -V; McIntyre, Paul C; Baniecki, John D; Nomura, Kenji; Shioga, Takeshi; Kurihara, Kazuaki; Ishii, Masatoshi ^[1]; Fujitsu Laboratories Ltd, Atsugi ^[2]

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1. Department of Materials Science and Engineering, Stanford University, California (United States)
2. Japan

We demonstrate that large and simultaneous improvements in permittivity, tunability, and leakage current density of (Ba,Sr)TiO{sub 3} (BST)-based thin-film capacitors can be achieved by yttrium doping. We have found that, for a low deposition temperature (520 deg. C) sputtering process, Y-doped BST capacitors exhibit tenfold lower leakage current density (<10{sup -9} A/cm{sup 2} at 100 KV/cm) and 70% higher permittivity than nominally undoped BST-based capacitors. Furthermore, this work suggests an intriguing correlation between dopant concentration-dependent elastic strain in the films and their enhanced dielectric properties.

• OSTI ID: 20706457
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 19 Vol. 87; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BARIUM COMPOUNDS
CAPACITANCE
CAPACITORS
CORRELATIONS
DEFORMATION
DEPOSITION
DIELECTRIC MATERIALS
DOPED MATERIALS
LEAKAGE CURRENT
PERMITTIVITY
SPUTTERING
STRONTIUM COMPOUNDS
THIN FILMS
TITANATES
YTTRIUM