Hydrogen implantation into ZnO for n{sup +}-layer formation

Journal Article · Mon Nov 07 04:00:00 EST 2005 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2128059· OSTI ID:20706452

Monakhov, E V; Christensen, J S; Maknys, K; Svensson, B G; Kuznetsov, A Yu ^[1]

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1. Department of Physics/Center for Material Science and Nanotechnology, University of Oslo, PO Box 1048 Blindern, 0316 Oslo (Norway)

Bulk ZnO crystals were implanted using 100 keV H{sup +} ions with doses 5x10{sup 16} and 2x10{sup 17} cm{sup -2} and subsequently annealed at 200-600 deg. C to study the evolution of the implanted H by employing secondary ion mass spectrometry and scanning spreading resistance microscopy. It is shown that the heat treatment results in a decrease of H concentration in the implanted region, while no significant broadening of the H profiles is observed. This suggests that the implanted H is trapped in immobile complexes which dissociate during annealing with subsequent outdiffusion of H from the implanted region. The formation of a highly conductive n{sup +}-layer is observed in the implanted region, and the n{sup +}-layer is found to be stable up to 600 deg. C. A correlation between electrical activity of H and presence of radiation damage is discussed.

• OSTI ID: 20706452
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 19 Vol. 87; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
CORRELATIONS
CRYSTALS
DISSOCIATION
ELECTRIC CONDUCTIVITY
HYDROGEN IONS 1 PLUS
ION BEAMS
ION IMPLANTATION
ION MICROPROBE ANALYSIS
KEV RANGE 10-100
LAYERS
MASS SPECTROSCOPY
MICROSCOPY
SEMICONDUCTOR MATERIALS
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0400-1000 K
ZINC OXIDES