Interface engineering for lattice-matched epitaxy of ZnO on (La,Sr)(Al,Ta)O{sub 3}(111) substrate

Journal Article · Mon Nov 14 00:00:00 EST 2005 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2130523· OSTI ID:20706422

Ying, M J; Du, X L; Liu, Y Z; Zhou, Z T; Zeng, Z Q; Mei, Z X; Jia, J F; Chen, H; Xue, Q K; Zhang, Z ^[1]

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1. Institute of Physics, The Chinese Academy of Sciences and National Center for Nano-Science and Technology, Beijing 100080 (China)

ZnO/(La,Sr)(Al,Ta)O{sub 3}(LSAT) heterointerface is engineered to control the crystallographic orientation of ZnO films grown by plasmas-assisted molecular beam epitaxy. Lattice-matched in-plane alignment of [1120]{sub ZnO} parallel [112]{sub LSAT} has been realized using Mg modification of the substrate surface, which is confirmed with in situ reflection high-energy electron diffraction observation, and ex situ characterization of x-ray diffraction and transmission electron microscopy. The low-temperature deposition and high-temperature treatment of the Mg layer on the oxygen-terminated LSAT(111) surface results in selective nucleation of a MgO interface layer which serves as a template for single-domain epitaxy of ZnO. Oxygen-polar ZnO film with an atomically smooth surface has been obtained, which is favorable for metal-ZnO Schottky contact with high barrier height.

• OSTI ID: 20706422
• Journal Information: Applied Physics Letters, Vol. 87, Issue 20; Other Information: DOI: 10.1063/1.2130523; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINATES
CRYSTAL GROWTH
CRYSTALLOGRAPHY
ELECTRON DIFFRACTION
INTERFACES
LANTHANUM COMPOUNDS
LAYERS
MAGNESIUM OXIDES
MOLECULAR BEAM EPITAXY
NUCLEATION
OXYGEN
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR MATERIALS
STRONTIUM COMPOUNDS
SUBSTRATES
SURFACE TREATMENTS
TANTALATES
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION
ZINC OXIDES