III-nitride integration on ferroelectric materials of lithium niobate by molecular beam epitaxy

Journal Article · Mon Oct 24 04:00:00 EDT 2005 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2084340· OSTI ID:20706388

Namkoong, Gon; Lee, Kyoung-Keun; Madison, Shannon M; Henderson, Walter; Ralph, Stephen E; Doolittle, W Alan ^[1]

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1. Georgia Institute of Technology, School of Electrical and Computer Engineering, 777 Atlantic Dr., Atlanta, Georgia 30332 (United States)

Integration of III-nitride electrical devices on the ferroelectric material lithium niobate (LiNbO{sub 3}) has been demonstrated. As a ferroelectric material, lithium niobate has a polarization which may provide excellent control of the polarity of III-nitrides. However, while high temperature, 1000 deg. C, thermal treatments produce atomically smooth surfaces, improving adhesion of GaN epitaxial layers on lithium niobate, repolarization of the substrate in local domains occurs. These effects result in multi domains of mixed polarization in LiNbO{sub 3}, producing inversion domains in subsequent GaN epilayers. However, it is found that AlN buffer layers suppress inversion domains of III-nitrides. Therefore, two-dimensional electron gases in AlGaN/GaN heterojunction structures are obtained. Herein, the demonstration of the monolithic integration of high power devices with ferroelectric materials presents possibilities to control LiNbO{sub 3} modulators on compact optoelectronic/electronic chips.

• OSTI ID: 20706388
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 17 Vol. 87; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ADHESION
ALUMINIUM NITRIDES
BUFFERS
CRYSTAL GROWTH
ELECTRON GAS
FERROELECTRIC MATERIALS
GALLIUM NITRIDES
HETEROJUNCTIONS
LAYERS
LITHIUM COMPOUNDS
MOLECULAR BEAM EPITAXY
NIOBATES
POLARIZATION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR MATERIALS
SUBSTRATES
SURFACES
TEMPERATURE RANGE 1000-4000 K