Semiconductor gas sensor based on tin oxide nanorods prepared by plasma-enhanced chemical vapor deposition with postplasma treatment
- Microelectronics Center, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 (Singapore)
SnO{sub 2} thin films were deposited by radio-frequency inductively coupled plasma-enhanced chemical vapor deposition. Postplasma treatments were used to modify the microstructure of the as-deposited SnO{sub 2} thin films. Uniform nanorods with dimension of null-set 7x100 nm were observed in the plasma-treated films. After plasma treatments, the optimal operating temperature of the plasma-treated SnO{sub 2} thin films decreased by 80 deg. C, while the gas sensitivity increased eightfold. The enhanced gas sensing properties of the plasma-treated SnO{sub 2} thin film were believed to result from the large surface-to-volume ratio of the nanorods' tiny grain size in the scale comparable to the space-charge length and its unique microstructure of SnO{sub 2} nanorods rooted in SnO{sub 2} thin films.
- OSTI ID:
- 20706386
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 16 Vol. 87; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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