GaAs on Si(111)-crystal shape and strain relaxation in nanoscale patterned growth

Journal Article · Mon Jul 11 04:00:00 EDT 2005 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.1984100· OSTI ID:20702576

Lee, S C; Dawson, L R; Brueck, S R.J.; Jiang, Y -B ^[1]

---

1. Center for High Technology Materials and Department of Electrical and Computer Engineering, University of New Mexico, 1313 Goddard, SE, Albuquerque, New Mexico 87106 (United States)

Nanoscale patterned growth of GaAs on Si(111) by molecular beam epitaxy is examined. A 355 nm period two-dimensional array of circular holes (diameter {approx}200-250 nm) is fabricated into a 45-nm-thick SiO{sub 2} film on a Si(111) substrate by large-area interferometric lithography and dry etching. For 300 nm deposition, the GaAs epilayer selectively deposited within each hole on the patterned substrate is surrounded by {l_brace}110{r_brace}-type sidewalls perpendicular to Si(111), resulting in a hexagon-based prismatic pillar, without significant lateral overgrowth. At the initial stage of growth, twins parallel to Si(111) and an aperiodic mixture of cubic and hexagonal phases are observed but most of the GaAs pillars are terminated with a cubic phase region. Raman scattering reveals that the individual nanoscale GaAs pillars are completely strain relaxed.

• OSTI ID: 20702576
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 2 Vol. 87; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL GROWTH
CRYSTALS
DEPOSITION
ETCHING
FILMS
GALLIUM ARSENIDES
LAYERS
MOLECULAR BEAM EPITAXY
NANOSTRUCTURES
RAMAN EFFECT
RAMAN SPECTRA
SEMICONDUCTOR MATERIALS
SILICON OXIDES
STRAINS
STRESS RELAXATION
SUBSTRATES