Indium redistribution in an InGaN quantum well induced by electron-beam irradiation in a transmission electron microscope

Journal Article · Mon Jun 13 00:00:00 EDT 2005 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.1948517· OSTI ID:20702462

Li, T; Hahn, E; Gerthsen, D; Rosenauer, A; Strittmatter, A; Reissmann, L; Bimberg, D ^[1]

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1. Laboratorium fuer Elektronenmikroskopie, Universitaet Karlsruhe, D-76128 Karlsruhe (Germany)

The change of the morphology and indium distribution in an In{sub 0.12}Ga{sub 0.88}N quantum well embedded in GaN was investigated depending on the duration of electron-beam irradiation in a transmission electron microscope. Strain-state analysis based on high-resolution lattice-fringe images was used to determine quantitatively the local and average indium concentration of the InGaN quantum well. In-rich clusters were found already in the first image taken after 20 s of irradiation. The indium concentration in the clusters tends to increase with prolonged irradiation time. In contrast, the locally averaged indium concentration and the quantum-well width do not change within the first minute.

• OSTI ID: 20702462
• Journal Information: Applied Physics Letters, Vol. 86, Issue 24; Other Information: DOI: 10.1063/1.1948517; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ELECTRON BEAMS
GALLIUM NITRIDES
IMAGES
INDIUM
INDIUM NITRIDES
IRRADIATION
MORPHOLOGY
QUANTUM WELLS
RESOLUTION
SEMICONDUCTOR MATERIALS
SPATIAL DISTRIBUTION
TRANSMISSION ELECTRON MICROSCOPY