Composition analysis of coaxially grown InGaN multi quantum wells using scanning transmission electron microscopy
- Institute of Solid State Physics, University of Bremen, Otto-Hahn-Allee NW1, 28359 Bremen (Germany)
- Institute of Optoelectronics, Ulm University, Albert-Einstein-Allee 45, 89081 Ulm (Germany)
- Institute of Quantum Matter/Semiconductor Physics Group, Ulm University, Albert-Einstein-Allee 45, 89081 Ulm (Germany)
GaN nanotubes with coaxial InGaN quantum wells were analyzed by scanning transmission electron microscopy in order to determine their structural properties as well as the indium distribution across the InGaN quantum wells. For the latter, two process steps are necessary. First, a technique to prepare cross-sectional slices out of the nanotubes has been developed. Second, an existing scanning transmission electron microscopy analysis technique has been extended with respect to the special crystallographic orientation of this type of specimen. In particular, the shape of the nanotubes, their defect structure, and the incorporation of indium on different facets were investigated. The quantum wells preferentially grow on m-planes of the dodecagonally shaped nanotubes and on semipolar top facets while no significant indium signal was found on a-planes. An averaged indium concentration of 6% to 7% was found by scanning transmission electron microscopy analysis and could be confirmed by cathodoluminescence measurements.
- OSTI ID:
- 22596948
- Journal Information:
- Journal of Applied Physics, Vol. 119, Issue 17; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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