Measure of disorder in tetrahedrally bonded semiconductors
- Materials Science Division, Indira Gandhi Centre for Atomic Research, Kalpakkam 603 102 (India)
A measure of crystalline order in tetrahedrally bonded semiconductors is proposed based on optical response. This measure is obtained from the <111> critical point structure in the dielectric spectra. This descriptor is sensitive to the nature and extent of disorder in specimens and distinguishes differences in medium and short-order present in amorphous materials. Application to Ar{sup +}-irradiated Si specimens yields the threshold amorphization dose and this technique is sensitive to structural changes which occur as a function of irradiation fluence both above and beyond the amorphization threshhold. Systematic variations are also obtained in hydrogenated amorphous-Si. The general validity of the method is indicated.
- OSTI ID:
- 20702459
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 24 Vol. 86; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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