Evidence of formation of Si-C bonds during growth of Si-doped III-V semiconductor compounds

Journal Article · Mon Apr 11 00:00:00 EDT 2005 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.1905783· OSTI ID:20702299

Bettini, J

In this work, we demonstrate that Si-C bonds are formed in III-V semiconductor compounds grown by chemical beam epitaxy. Our results suggest that the formation of Si-C bonds occurs in III-V epitaxial layers with acceptor Carbon residual concentration and high Si concentrations (>10{sup 17} cm{sup -3}). The main consequence of Si-C bonds is the generation of defects along [111] direction. These defects produce carrier concentration saturation, reduction of electrical mobility, crystal quality degradation, and surface defects.

• OSTI ID: 20702299
• Journal Information: Applied Physics Letters, Vol. 86, Issue 15; Other Information: DOI: 10.1063/1.1905783; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CARBON
CARRIER MOBILITY
CHEMICAL BONDS
CRYSTAL GROWTH
CRYSTALS
DISLOCATIONS
DOPED MATERIALS
ELECTRON DENSITY
EPITAXY
GALLIUM ARSENIDES
IMPURITIES
INDIUM COMPOUNDS
MORPHOLOGY
SEMICONDUCTOR MATERIALS
SILICON
SPATIAL DISTRIBUTION