The effect of preamorphization energy on ultrashallow junction formation following ultrahigh-temperature annealing of ion-implanted silicon
Journal Article
·
· Journal of Applied Physics
- Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)
High-power arc lamp design has enabled ultrahigh-temperature (UHT) annealing as an alternative to conventional rapid thermal processing (RTP) for ultrashallow junction formation. The time duration of the UHT annealing technique is significantly reduced from those obtained through conventional RTP. This difference in time may offer the ability to maintain a highly activated ultrashallow junction without being subjected to transient enhanced diffusion (TED), which is typically observed during postimplant thermal processing. In this study, two 200-mm (100) n-type Czochralski-grown Si wafers were preamorphized with either a 48- or a 5-keV Ge{sup +} implant to 5x10{sup 14} cm{sup 2}, and subsequently implanted with 3-keV BF{sub 2}{sup +} molecular ions to 6x10{sup 14} cm{sup 2}. The wafers were sectioned and annealed under various conditions in order to investigate the effects of the UHT annealing technique on the resulting junction characteristics. The main point of the paper is to show that the UHT annealing technique is capable of producing a highly activated p-type source/drain extension without being subjected to TED only when the preamorphization implant is sufficiently deep.
- OSTI ID:
- 20668208
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 4 Vol. 97; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
Similar Records
Fluorine-enhanced boron diffusion in germanium-preamorphized silicon
Ultrashallow (<10 nm) p{sup +}/n junction formed by B{sub 18}H{sub 22} cluster ion implantation and excimer laser annealing
Differential Hall effect profiling of ultrashallow junctions in Sb implanted silicon
Journal Article
·
Sat Oct 01 00:00:00 EDT 2005
· Journal of Applied Physics
·
OSTI ID:20714126
Ultrashallow (<10 nm) p{sup +}/n junction formed by B{sub 18}H{sub 22} cluster ion implantation and excimer laser annealing
Journal Article
·
Sun Dec 10 23:00:00 EST 2006
· Applied Physics Letters
·
OSTI ID:20880177
Differential Hall effect profiling of ultrashallow junctions in Sb implanted silicon
Journal Article
·
Mon Sep 13 00:00:00 EDT 2004
· Applied Physics Letters
·
OSTI ID:20632849