Influence of gaseous annealing environment on the properties of indium-tin-oxide thin films

Journal Article · Tue Feb 01 00:00:00 EST 2005 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.1834984· OSTI ID:20665079

Wang, R X; Beling, C D; Fung, S; Djurisic, A B; Ling, C C; Li, S ^[1]

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1. Department of Physics, University of Hong Kong, Pokfulam Road, Hong Kong (China)

The influence of postannealing in different gaseous environments on the optical properties of indiu-tin-oxide (ITO) thin films deposited on glass substrates using e-beam evaporation has been systematically investigated. It is found that the annealing conditions affect the optical and electrical properties of the films. Atomic force microscopy, x-ray diffraction, and x-ray photoemission spectroscopy (XPS) were employed to obtain information on the chemical state and crystallization of the films. These data suggest that the chemical states and surface morphology of the ITO film are strongly influenced by the gaseous environment during the annealing process. The XPS data indicate that the observed variations in the optical transmittance can be explained by oxygen incorporation into the film, decomposition of the indium oxide phases, as well as the removal of metallic In.

• OSTI ID: 20665079
• Journal Information: Journal of Applied Physics, Vol. 97, Issue 3; Other Information: DOI: 10.1063/1.1834984; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
ATOMIC FORCE MICROSCOPY
CARRIER DENSITY
CHEMICAL STATE
CRYSTALLIZATION
DECOMPOSITION
ELECTRICAL PROPERTIES
ELECTRON BEAMS
EVAPORATION
INDIUM OXIDES
MORPHOLOGY
OPTICAL PROPERTIES
OXYGEN
PHOTOEMISSION
SURFACES
THIN FILMS
TIN OXIDES
VACUUM COATING
X-RAY DIFFRACTION
X-RAY PHOTOELECTRON SPECTROSCOPY