Growth of an {alpha}-Sn film on an InSb(111) A-(2x2) surface

Journal Article · Wed Dec 15 04:00:00 EST 2004 · Physical Review. B, Condensed Matter and Materials Physics

DOI:https://doi.org/10.1103/PhysRevB.70.233314· OSTI ID:20662279

Kondo, Daiyu; Sakamoto, Kazuyuki; Shima, Masahide; Takeyama, Wakaba ^[1]; Nakamura, Kenya; Ono, Kanta; Oshima, Masaharu ^[2]; Kasukabe, Yoshitaka ^[3]

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1. Department of Physics, Graduate School of Science, Tohoku University, Sendai 980-8578 (Japan)
2. Department of Applied Chemistry, Graduate School of Engineering, University of Tokyo, Tokyo 113-0033 (Japan)
3. Department of Electronic Engineering/International Student Center, Tohoku University, Sendai 980-8578 (Japan)

We have investigated the initial growth process of {alpha}-Sn films on the In-terminated InSb(111)A-(2x2) surface using low-energy electron diffraction (LEED) and high-resolution core-level photoelectron spectroscopy. Taking the LEED observation and the Sn coverage-dependent integrated intensities of the In 4d, Sb 4d, and Sn 4d core-level spectra into account, we conclude that the {alpha}-Sn film grows epitaxially by a bilayer mode and that there is no interdiffusion of the substrate atoms as suggested in the literature. Furthermore, the coverage-dependent In 4d and Sn 4d core levels indicate that the In vacancy site of InSb(111)A-(2x2) surface is not the preferable Sn absorption site.

• OSTI ID: 20662279
• Journal Information: Physical Review. B, Condensed Matter and Materials Physics, Journal Name: Physical Review. B, Condensed Matter and Materials Physics Journal Issue: 23 Vol. 70; ISSN 1098-0121
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ABSORPTION
CRYSTALS
ELECTRON DIFFRACTION
EPITAXY
FILMS
INDIUM ANTIMONIDES
LAYERS
PHOTOELECTRON SPECTROSCOPY
SEMICONDUCTOR MATERIALS
SPECTRA
SURFACES
TIN
VACANCIES