Boron-silicon solid solution: synthesis and crystal structure of a carbon-doped boron-rich SiB{sub n} (n{approx}30) compound

Journal Article · Mon Nov 01 00:00:00 EST 2004 · Journal of Solid State Chemistry

DOI:https://doi.org/10.1016/j.jssc.2004.07.004· OSTI ID:20658194

Roger, Jerome ^[1]; Babizhetskyy, Volodymyr ^[1]; Halet, Jean-Francois ^[1]; Guerin, Roland ^[1]

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1. Laboratoire de Chimie du Solide et Inorganique Moleculaire, Institut de Chimie de Rennes, UMR 6511 CNRS-Universite de Rennes 1, Avenue du General Leclerc, F-35042 Rennes Cedex (France)

The carbon-doped SiB{sub 3}{approx}{sub 30} compound was obtained during attempts to synthesize by arc-melting boron-rich binaries belonging to the SiB{sub n} solid solution (13n<32). Its crystal structure was determined from X-ray single-crystal intensity data (R-3m, Z=1, a=11.0152(3)A, and c=23.8625(8)A) and led to the final formula SiB{sub {approx}}{sub 30}C{sub 0.35}. Carbon is incorporated fortuitously in the structure. The boron framework of these phases slightly differs from that encountered in {beta}-boron. The salient characteristic is the partial occupancy of three interstitial boron sites by silicon and one by carbon atoms. This is in contrast with the structurally related compounds such as SiB{sub {approx}}{sub 36}, CrB{sub {approx}}{sub 41}, or FeB{sub {approx}}{sub 40}, in which only two interstitial sites are partially occupied.

• OSTI ID: 20658194
• Journal Information: Journal of Solid State Chemistry, Vol. 177, Issue 11; Other Information: DOI: 10.1016/j.jssc.2004.07.004; PII: S0022-4596(04)00382-2; Copyright (c) 2004 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved; Country of input: International Atomic Energy Agency (IAEA); ISSN 0022-4596
• Country of Publication: United States
• Language: English

Related Subjects

37 INORGANIC
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
CARBON
DOPED MATERIALS
MONOCRYSTALS
SILICON BORIDES
SOLID SOLUTIONS
SYNTHESIS
TRIGONAL LATTICES
X-RAY DIFFRACTION