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Dopant effect on grain boundary diffusivity in polycrystalline alumina

Journal Article · · Acta Materialia
 [1];  [2];  [2]
  1. Fine-grained Refractory Materials Group/ICYS, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan)
  2. Department of Advanced Materials Science, School of Frontier Science, University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa Chiba 277-8581 (Japan)
The densification behavior during sintering in 0.1 mol% MgO-, MnO-, SrO-, LuO{sub 1.5}-, TiO{sub 2}-, ZrO{sub 2}- or PtO{sub 2}-doped Al{sub 2}O{sub 3} was investigated at the sintering temperature of 1300-1500 deg C in order to systematically examine the dopant effect on grain boundary diffusivity in Al{sub 2}O{sub 3}. The densification behavior was monitored from room temperature to the sintering temperature using a laser-scanning system, which allows in situ, non-contact measuring of the specimen's dimensions. The grain boundary diffusivity in Al{sub 2}O{sub 3} is sensitively affected by the dopant cation which segregates at the grain boundaries. The dopant effect on the grain boundary diffusivity is related to the ionicity in Al{sub 2}O{sub 3}; a lower energy level of the dopant element's outer shells provides a higher value of diffusivity in the divalent or tetravalent cation-doped Al{sub 2}O{sub 3}. A first-principle molecular orbital calculation revealed that the grain boundary diffusivity correlates well with the net charge of the Al and O ions in the cation-doped Al{sub 2}O{sub 3}. The ionic bond strength in the vicinity of the grain boundaries dominates the high-temperature grain boundary diffusion in polycrystalline Al{sub 2}O{sub 3}.
OSTI ID:
20637126
Journal Information:
Acta Materialia, Journal Name: Acta Materialia Journal Issue: 2 Vol. 53; ISSN 1359-6454; ISSN ACMAFD
Country of Publication:
United States
Language:
English