Surface treatment for the atomic layer deposition of HfO{sub 2} on silicon

Journal Article · Mon Apr 04 04:00:00 EDT 2005 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.1899237· OSTI ID:20637072

Damlencourt, J-F; Renault, O; Martin, F; Semeria, M-N; Billon, T; Bedu, F ^[1]

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1. CEA/DRT, LETI/D2NT and DPTS, CEA/GRE 17 avenue des martyrs, 38000 GRENOBLE cedex 9 (France)

The atomic layer deposition (ALD) of HfO{sub 2} on silicon with a Cl{sub 2} surface treatment is investigated by physicochemical and electrical techniques. The specificity of this treatment is to create, on a HF-dipped silicon surface, the nucleation sites necessary for the ALD growth. The growth rates obtained by spectroscopic ellipsometry and total x-ray fluorescence spectroscopy indicate that the nucleation sites (i.e., the -OH groups), which are necessary to perform some bidimensional ALD growth, are generated during this surface treatment. After deposition of thin HfO{sub 2} layers (from a few monolayers up to 8.7 nm), a very thin parasitic SiO{sub x} layer, underneath 1 monolayer of Hf silicate, is observed by x-ray photoelectron spectroscopy. Nevertheless, an equivalent oxide thickness of 1.1 nm is obtained with an as-deposited 3.7 nm thick HfO{sub 2} layer.

• OSTI ID: 20637072
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 14 Vol. 86; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHLORINE
CRYSTAL GROWTH
DEPOSITION
DIELECTRIC MATERIALS
ELLIPSOMETRY
FLUORESCENCE SPECTROSCOPY
HAFNIUM OXIDES
LAYERS
SILICATES
SILICON
SILICON OXIDES
SURFACE TREATMENTS
SURFACES
THICKNESS
THIN FILMS
X-RAY FLUORESCENCE ANALYSIS
X-RAY PHOTOELECTRON SPECTROSCOPY