Low-voltage pentacene thin-film transistors with Ta{sub 2}O{sub 5} gate insulators and their reversible light-induced threshold voltage shift
- Key Laboratory of Organic Optoelectronics and Molecular Engineering of Ministry of Education, Department of Chemistry, Tsinghua University, Beijing 100084 (China)
We have fabricated pentacene thin-film transistors using Ta{sub 2}O{sub 5} films prepared by magnetron reactive sputtering as gate insulators. These transistors exhibit good electrical characteristics at an operating voltage as low as 5 V, with a field-effect mobility of 0.32 cm{sup 2}/Vs, an on/off ratio of 10{sup 4}, and a subthreshold slope of 0.5 V/decade. We have also investigated the optical properties of these transistors and observed a reversible light-induced threshold voltage shift. Under illumination, the threshold voltage shifts towards the positive direction while the field-effect mobility and on/off ratio remain almost unchanged. In the dark, however, the threshold voltage can slowly be restored to its original state. At a gate voltage of -5 V, the transistors show a broadband responsivity of 3.7 A/W after illumination at 60 {mu}W/cm{sup 2} for 10 min.
- OSTI ID:
- 20637051
- Journal Information:
- Applied Physics Letters, Vol. 86, Issue 13; Other Information: DOI: 10.1063/1.1896099; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Comparison of structural and electrical properties of Lu{sub 2}O{sub 3} and Lu{sub 2}TiO{sub 5} gate dielectrics for α-InGaZnO thin-film transistors
Double-gate SnO{sub 2} nanowire electric-double-layer transistors with tunable threshold voltage