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Amorphous silicon nitride films of different composition deposited at room temperature by pulsed glow discharge plasma immersion ion implantation and deposition

Journal Article · · Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films
DOI:https://doi.org/10.1116/1.1798731· OSTI ID:20636776
; ; ;  [1]
  1. Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)
Amorphous hydrogenated silicon nitride (a-SiN{sub x}:H) films of different compositions (0{<=}x{<=}1.18) were prepared by pulsed glow discharge plasma immersion ion implantation and deposition. The processing gases were silane and nitrogen at a substrate temperature {<=}50 deg. C. The properties of the films were investigated using Rutherford backscattering, elastic recoil detection analysis, UV-visible optical absorption, Fourier transform infrared, and Raman spectroscopies, and nanoindentation. Depending on the value of x, the band gap of the films changes from 1.54 to 4.42 eV, and hardness changes from 11.2 to 15.3 GPa. Changes in the film properties are caused by formation of Si-N bonds and by reducing disorder in the films. It is shown that hard and transparent silicon nitride films can be obtained at room temperature.
OSTI ID:
20636776
Journal Information:
Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films Journal Issue: 6 Vol. 22; ISSN 0734-2101; ISSN JVTAD6
Country of Publication:
United States
Language:
English