Saddle-field glow-discharge deposition of amorphous semiconductors

Book · Tue Dec 31 00:00:00 EST 1996

OSTI ID:527659

Gaspari, F; Sidhu, L S; O`Leary, S K; Zukotynski, S ^[1]

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1. Univ. of Toronto, Ontario (Canada). Dept. of Electrical and Computer Engineering

The authors present a dc saddle-field glow-discharge deposition procedure which combines the positive attributes of the conventional dc and rf glow-discharge techniques. Preliminary mass spectra analyses of both silane and methane glow-discharges demonstrates that ions constitute a significant fraction of the species reaching the film surface. Growth rate analyses suggest that ions play a significant role in the saddle-field glow-discharge deposition of amorphous semiconducting films.

• Sponsoring Organization: Natural Sciences and Engineering Research Council of Canada, Ottawa, ON (Canada)
• OSTI ID: 527659
• Report Number(s): CONF-960401-; ISBN 1-55899-323-1; TRN: IM9741%%87
• Resource Relation: Conference: Spring meeting of the Materials Research Society (MRS), San Francisco, CA (United States), 8-12 Apr 1996; Other Information: PBD: 1996; Related Information: Is Part Of Amorphous silicon technology -- 1996; Hack, M. [ed.] [dpiX, Palo Alto, CA (United States)]; Schiff, E.A. [ed.] [Syracuse Univ., NY (United States)]; Wagner, S. [ed.] [Princeton Univ., NJ (United States)]; Schropp, R. [ed.] [Utrecht Univ. (Netherlands)]; Matsuda, Akihisa [ed.] [Electrotechnical Lab., Tsukuba (Japan)]; PB: 929 p.; Materials Research Society symposium proceedings, Volume 420
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHEMICAL VAPOR DEPOSITION
SILICON
CARBON
THIN FILMS
SILANES
METHANE
GLOW DISCHARGES
ELECTRODES
IONS
ENERGY
MASS SPECTRA
EXPERIMENTAL DATA