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Title: Cu oxide nanowire array grown on Si-based SiO{sub 2} nanoscale islands via nanochannels

Journal Article · · Acta Materialia
 [1];  [2];  [3];  [2];  [2];  [2];  [3]
  1. Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong (China) and Department of Physics, National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093 (China)
  2. Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong (China)
  3. Department of Physics, National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093 (China)

Cu oxide nanowire array on Si-based SiO{sub 2} nanoscale islands was fabricated via nanochannels of Si-based porous anodic alumina (PAA) template at room temperature under a pulse voltage in a conventional solution for copper electrodeposition. X-ray diffraction and X-ray photoelectron spectroscopy showed that the main composite of the oxide nanowire is Cu{sub 2}O. The nanowires had a preferential growth direction (1 1 1) and connected with the nanoscale SiO{sub 2} islands, which was confirmed by Transmission Electron Microscopy (TEM). Such Si-based nanostructure is useful in the nanoelectrics application. The growth mechanism of Cu oxide nanowires in Si-based PAA template was discussed. The formation of Cu{sub 2}O is due to the alkalinity of the anodized solution. However, the oscillations of the potential and current during the experiment trend to bring on a small amount of copper and CuO in the nanowires.

OSTI ID:
20634783
Journal Information:
Acta Materialia, Vol. 52, Issue 17; Other Information: DOI: 10.1016/j.actamat.2004.07.010; PII: S1359-6454(04)00419-7; Copyright (c) 2004 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved; Country of input: International Atomic Energy Agency (IAEA); ISSN 1359-6454
Country of Publication:
United States
Language:
English