Cu oxide nanowire array grown on Si-based SiO{sub 2} nanoscale islands via nanochannels
- Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong (China) and Department of Physics, National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093 (China)
- Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong (China)
- Department of Physics, National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093 (China)
Cu oxide nanowire array on Si-based SiO{sub 2} nanoscale islands was fabricated via nanochannels of Si-based porous anodic alumina (PAA) template at room temperature under a pulse voltage in a conventional solution for copper electrodeposition. X-ray diffraction and X-ray photoelectron spectroscopy showed that the main composite of the oxide nanowire is Cu{sub 2}O. The nanowires had a preferential growth direction (1 1 1) and connected with the nanoscale SiO{sub 2} islands, which was confirmed by Transmission Electron Microscopy (TEM). Such Si-based nanostructure is useful in the nanoelectrics application. The growth mechanism of Cu oxide nanowires in Si-based PAA template was discussed. The formation of Cu{sub 2}O is due to the alkalinity of the anodized solution. However, the oscillations of the potential and current during the experiment trend to bring on a small amount of copper and CuO in the nanowires.
- OSTI ID:
- 20634783
- Journal Information:
- Acta Materialia, Vol. 52, Issue 17; Other Information: DOI: 10.1016/j.actamat.2004.07.010; PII: S1359-6454(04)00419-7; Copyright (c) 2004 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved; Country of input: International Atomic Energy Agency (IAEA); ISSN 1359-6454
- Country of Publication:
- United States
- Language:
- English
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