CdSe self-assembled quantum dots with ZnCdMgSe barriers emitting throughout the visible spectrum
- Department of Chemistry, City College of City University of New York, New York, New York 10031 (United States)
Self-assembled quantum dots of CdSe with ZnCdMgSe barriers have been grown by molecular beam epitaxy on InP substrates. The optical and microstructural properties were investigated using photoluminescence (PL) and atomic force microscopy (AFM) measurements. Control and reproducibility of the quantum dot (QD) size leading to light emission throughout the entire visible spectrum range has been obtained by varying the CdSe deposition time. Longer CdSe deposition times result in a redshift of the PL peaks as a consequence of an increase of QD size. AFM studies demonstrate the presence of QDs in uncapped structures. A comparison of this QD system with CdSe/ZnSe shows that not only the strain but also the chemical properties of the system play an important role in QD formation.
- OSTI ID:
- 20634584
- Journal Information:
- Applied Physics Letters, Vol. 85, Issue 26; Other Information: DOI: 10.1063/1.1834993; (c) 2004 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Spectral widths and Stokes shifts in InP-based quantum dots
Density Control of InP/GaInP Quantum Dots Grown by Metal-Organic Vapor-Phase Epitaxy
Related Subjects
ATOMIC FORCE MICROSCOPY
CADMIUM SELENIDES
CHEMICAL PROPERTIES
COMPARATIVE EVALUATIONS
CRYSTAL GROWTH
CRYSTAL STRUCTURE
INDIUM PHOSPHIDES
MANGANESE COMPOUNDS
MICROSTRUCTURE
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
QUANTUM DOTS
SEMICONDUCTOR MATERIALS
SUBSTRATES
VACUUM COATING
VISIBLE RADIATION
VISIBLE SPECTRA
ZINC SELENIDES