Surface ordering of (In,Ga)As quantum dots controlled by GaAs substrate indexes

Journal Article · Mon Nov 22 00:00:00 EST 2004 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.1823590· OSTI ID:20634465

Wang, Zh M; Seydmohamadi, Sh; Lee, J H; Salamo, G J ^[1]

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1. Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701 (United States)

Self-organized surface ordering of (In,Ga)As quantum dots in a GaAs matrix was investigated using stacked multiple quantum dot layers prepared by molecular-beam epitaxy. While one-dimensional chain-like ordering is formed on singular and slightly misorientated GaAs(100) surfaces, we report on two-dimensional square-like ordering that appears on GaAs(n11)B, where n is 7, 5, 4, and 3. Using a technique to control surface diffusion, the different ordering patterns are found to result from the competition between anisotropic surface diffusion and anisotropic elastic matrix, a similar mechanism suggested before by Solomon [Appl. Phys. Lett. 84, 2073 (2004)].

• OSTI ID: 20634465
• Journal Information: Applied Physics Letters, Vol. 85, Issue 21; Other Information: DOI: 10.1063/1.1823590; (c) 2004 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANISOTROPY
ATOMIC FORCE MICROSCOPY
DIFFUSION
GALLIUM ARSENIDES
INDIUM ARSENIDES
LAYERS
MOLECULAR BEAM EPITAXY
MORPHOLOGY
QUANTUM DOTS
SEMICONDUCTOR MATERIALS
SUBSTRATES
SURFACES
TOPOGRAPHY