Lattice location and thermal stability of implanted Fe in ZnO

Journal Article · Sun Nov 21 23:00:00 EST 2004 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.1825611· OSTI ID:20634451

Rita, E; Wahl, U; Correia, J G; Alves, E; Soares, J C ^[1]; CERN-PH, 1211 Geneva 23 ^[2]

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1. Instituto Tecnologico e Nuclear, Estrada Nacional 10, 2686-953 Sacavem (Portugal)
2. Switzerland

The emission channeling technique was applied to evaluate the lattice location of implanted {sup 59}Fe in single-crystalline ZnO. The angular distribution of {beta}{sup -} particles emitted by {sup 59}Fe was monitored with a position-sensitive electron detector, following 60 keV low dose (2.0x10{sup 13} cm{sup -2}) room-temperature implantation of the precursor isotope {sup 59}Mn. The emission patterns around the [0001], [1102],[1101], and [2113] directions revealed that following annealing at 800 deg. C, 95(8)% of the Fe atoms occupy ideal substitutional Zn sites with rms displacements of 0.06-0.09 A.

• OSTI ID: 20634451
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 21 Vol. 85; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANGULAR DISTRIBUTION
ANNEALING
ELECTRON EMISSION
ELECTRONS
ION IMPLANTATION
IRON 59
KEV RANGE 10-100
LATTICE PARAMETERS
MANGANESE 59
MONOCRYSTALS
SEMICONDUCTOR MATERIALS
TEMPERATURE RANGE 0273-0400 K
ZINC OXIDES