Clamping effects in the Al{sub 2}O{sub 3}(1120)/Nb(110)/Eu(110) epitaxial system
- Laboratoire de Physique des Materiaux (UMR CNRS 7556), Universite H. Poincare - Nancy I, BP 239, 54506 Vandoeuvre les Nancy Cedex (France)
In-plane and out-of-plane lattice parameters of Nb and Eu have been measured as a function of temperature between 10 and 300 K in the Al{sub 2}O{sub 3}(1120)/Nb(110)/Eu(110) epitaxial system. It is shown that the Nb lattice is clamped in the growth plane to the sapphire substrate, in the whole temperature range. On its own, the Eu lattice is totally free to expand isotropically above a clamping temperature T{sub cl}, below which in-plane parameters also freeze to an almost constant value. This well-defined clamping temperature strongly depends on the Eu thickness and likely is related to the thermal mobility of interface defects.
- OSTI ID:
- 20634441
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 20 Vol. 85; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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