Epitaxial growth of high T/sub c/ superconducting Nb/sub 3/Ge on Nb/sub 3/Ir

Journal Article · Sun May 15 04:00:00 EDT 1977 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.89227· OSTI ID:7323893

Dayem, A H; Geballe, T H; Zubeck, R B; Hallak, A B; Hull, Jr, G W

Nb/sub 3/Ir polycrystalline films with the A15 structure deposited on sapphire were used as substrates for the epitaxial growth of Nb/sub 3/Ge because of the favorable lattice parameter match. The experimental results clearly show that epitaxial growth indeed occurs and helps to extend the range of homogeneity of the A15 phase up to 26.3 at.% Ge as compared with the thermodynamic equilibrium boundary at 19 at.% Ge. Furthermore, epitaxy results in a considerable rise in the superconducting transition temperature for Ge-rich samples together with a reduction in the transition width.

• Research Organization: Bell Telephone Laboratories, Holmdel, New Jersey 07733
• OSTI ID: 7323893
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 30:10; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360104* -- Metals & Alloys-- Physical Properties
656102 -- Solid State Physics-- Superconductivity-- Acoustic
Electronic
Magnetic
Optical
& Thermal Phenomena-- (-1987)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALLOYS
CRYSTAL GROWTH
CRYSTALS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
EPITAXY
FILMS
GERMANIUM ALLOYS
IRIDIUM ALLOYS
NIOBIUM ALLOYS
NIOBIUM BASE ALLOYS
PHYSICAL PROPERTIES
PLATINUM METAL ALLOYS
POLYCRYSTALS
SUPERCONDUCTIVITY
SUPERCONDUCTORS
THERMODYNAMIC PROPERTIES
TRANSITION TEMPERATURE
TYPE-II SUPERCONDUCTORS