Periodic precipitation of crystalline Ge nanoparticles in Ge-B-SiO{sub 2} thin glass films
- Department of Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871 (Japan)
Crystalline 20- to 40-nm-diam Ge nanoparticles were precipitated periodically in Ge-B-SiO{sub 2} thin glass films fabricated by the plasma-enhanced chemical vapor deposition method. Such a periodic structure was created by exposure to an interference pattern with a KrF excimer laser (248 nm wavelength) and successive annealing at 600 deg. C. Nanoparticles were precipitated predominantly in the unirradiated region after photoinduced refractive index change was erased completely after annealing up to 500 deg. C.
- OSTI ID:
- 20634367
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 17 Vol. 85; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Precipitation of Ge nanoparticles from GeO{sub 2} glasses in transmission electron microscope
The 1.54-{mu}m photoluminescence from an (Er, Ge) co-doped SiO{sub 2} film deposited on Si by rf magnetron sputtering
Formation of Ge nanoparticles in SiO{sub x}N{sub y} by ion implantation and thermal annealing
Journal Article
·
Mon Apr 04 00:00:00 EDT 2005
· Applied Physics Letters
·
OSTI ID:20637078
The 1.54-{mu}m photoluminescence from an (Er, Ge) co-doped SiO{sub 2} film deposited on Si by rf magnetron sputtering
Journal Article
·
Sun Nov 07 23:00:00 EST 2004
· Applied Physics Letters
·
OSTI ID:20634408
Formation of Ge nanoparticles in SiO{sub x}N{sub y} by ion implantation and thermal annealing
Journal Article
·
Wed Oct 21 00:00:00 EDT 2015
· Journal of Applied Physics
·
OSTI ID:22492824