Effect of strain-compensation in stacked 1.3 {mu}m InAs/GaAs quantum dot active regions grown by metalorganic chemical vapor deposition

Journal Article · Mon Oct 11 04:00:00 EDT 2004 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.1805707· OSTI ID:20634344

Nuntawong, N; Birudavolu, S; Hains, C P; Huang, S; Xu, H; Huffaker, D L ^[1]

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1. Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States)

We have introduced tensile layers embedded in a GaAs matrix to compensate compressive strain in stacked 1.3 {mu}m InAs quantum dot (QD) active regions. The effects of the strain compensation are systematically investigated in five-stack and ten-stack QD structures where we have inserted In{sub x}Ga{sub 1-x}P (x=0.30 or 0.36) layers. High-resolution x-ray diffraction spectra quantify the overall strain in each sample and indicate >35% strain reduction can be accomplished. Both atomic force and transmission electron microscope images confirm that strain compensation improves material crystallinity and QD uniformity. With aggressive strain compensation, room temperature QD photoluminescence intensity is significantly increased demonstrating a reduced defect density.

• OSTI ID: 20634344
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 15 Vol. 85; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ATOMIC FORCE MICROSCOPY
CHEMICAL VAPOR DEPOSITION
GALLIUM ARSENIDES
INDIUM ARSENIDES
LAYERS
PHOSPHORUS ADDITIONS
PHOTOLUMINESCENCE
QUANTUM DOTS
SEMICONDUCTOR MATERIALS
TEMPERATURE RANGE 0273-0400 K
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION