Optical thin film deposition with O2 cluster ion beam assisted deposition
- Laboratory of Advanced Science and Technology for Industry, Himeji Institute of Technology (Japan)
O2 gas cluster ion beam (O2-GCIB) assisted depositions were studied to form high quality Ta2O5, Nb2O5 and SiO2 films. The optimum irradiation conditions for Ta2O5 and Nb2O5 film depositions were the acceleration energy of 5 to 9keV and the cluster ion current density over 0.5{mu}A/cm2, respectively. The Nb2O5/SiO2 films deposited with O2-GCIB irradiations showed very uniform and dense structures without columnar or porous structures. Due to the significant surface smoothing effect of GCIB, the interface and top surface of Nb2O5/SiO2 multi-layer were quite flat. The interference filter deposited with O2-GCIB assist deposition was very stable and there was no shift of wavelength before and after environmental tests. As O2-GCIB is equivalently very low-energy ion beam and is able to deposit flat and dense amorphous films at low substrate temperature, it is suited to deposit multi-layered films where low-energy assisting ions are required.
- OSTI ID:
- 20634204
- Journal Information:
- AIP Conference Proceedings, Vol. 680, Issue 1; Conference: 17. international conference on the application of accelerators in research and industry, Denton, TX (United States), 12-16 Nov 2002; Other Information: DOI: 10.1063/1.1619813; (c) 2003 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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