Depth Profiles of Mg, Si, and Zn Implants in GaN by Trace Element Accelerator Mass Spectrometry

Journal Article · Tue Aug 26 04:00:00 EDT 2003 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.1619737· OSTI ID:20632600

Ravi Prasad, G V ^[1]; Pelicon, P ^[1]; Mitchell, L J; McDaniel, F D ^[1]

---

1. Ion Beam Modification and Analysis Laboratory, Department of Physics, PO Box 311427, University of North Texas, Denton, TX 76203-1427 (United States)

GaN is one of the most promising electronic materials for applications requiring high-power, high frequencies, or high-temperatures as well as opto-electronics in the blue to ultraviolet spectral region. We have recently measured depth profiles of Mg, Si, and Zn implants in GaN substrates by the TEAMS particle counting method for both matrix and trace elements, using a gas ionization chamber. Trace Element Accelerator Mass Spectrometry (TEAMS) is a combination of Secondary Ion Mass Spectrometry (SIMS) and Accelerator Mass Spectrometry (AMS) to measure trace elements at ppb levels. Negative ions from a SIMS like source are injected into a tandem accelerator. Molecular interferences inherent with the SIMS method are eliminated in the TEAMS method. Negative ion currents are extremely low with GaN as neither gallium nor nitrogen readily forms negative ions making the depth profile measurements more difficult. The energies of the measured ions are in the range of 4-8 MeV. A careful selection of mass/charge ratios of the detected ions combined with energy-loss behavior of the ions in the ionization chamber eliminated molecular interferences.

• OSTI ID: 20632600
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 680; ISSN APCPCS; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ENERGY LOSSES
GALLIUM NITRIDES
ION BEAMS
ION IMPLANTATION
ION MICROPROBE ANALYSIS
IONIZATION CHAMBERS
MAGNESIUM
MASS SPECTROSCOPY
MEV RANGE 10-100
MINUS-PLUS RATIO
SILICON
SURFACE PROPERTIES
TANDEM ELECTROSTATIC ACCELERATORS
TRACE AMOUNTS
ULTRAVIOLET RADIATION
ZINC IONS