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U.S. Department of Energy
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Future prospects for ECR ion sources with improved charge state distributions

Conference ·
OSTI ID:204543
Despite the steady advance in the technology of the ECR ion source, present art forms have not yet reached their full potential in terms of charge state and intensity within a particular charge state, in part, because of the narrow band width. single-frequency microwave radiation used to heat the plasma electrons. This article identifies fundamentally important methods which may enhance the performances of ECR ion sources through the use of: (1) a tailored magnetic field configuration (spatial domain) in combination with single-frequency microwave radiation to create a large uniformly distributed ECR ``volume`` or (2) the use of broadband frequency domain techniques (variable-frequency, broad-band frequency, or multiple-discrete-frequency microwave radiation), derived from standard TWT technology, to transform the resonant plasma ``surfaces`` of traditional ECR ion sources into resonant plasma ``volume``. The creation of a large ECR plasma ``volume`` permits coupling of more power into the plasma, resulting in the heating of a much larger electron population to higher energies, thereby producing higher charge state ions and much higher intensities within a particular charge state than possible in present forms of` the source. The ECR ion source concepts described in this article offer exciting opportunities to significantly advance the-state-of-the-art of ECR technology and as a consequence, open new opportunities in fundamental and applied research and for a variety of industrial applications.
Research Organization:
Oak Ridge National Lab., TN (United States)
Sponsoring Organization:
USDOE, Washington, DC (United States)
DOE Contract Number:
AC05-84OR21400
OSTI ID:
204543
Report Number(s):
CONF-951039--9; ON: DE96005417
Country of Publication:
United States
Language:
English