Simulating total-dose and dose-rate effects on digital microelectronics timing delays using VHDL

Journal Article · Fri Dec 01 04:00:00 EST 1995 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/23.488759· OSTI ID:203682

Brothers, Jr, C P; Pugh, R D ^[1]

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1. Phillips Lab., Kirtland AFB, NM (United States)

This paper describes a fast timing simulator based on Very High Speed Integrated Circuit (VHSIC) Hardware Description Language (VHDL) for simulating the timing of digital microelectronics in pre-irradiation, total dose, and dose-rate radiation environments. The goal of this research is the rapid and accurate timing simulation of radiation-hardened microelectronic circuits before, during, and after exposure to ionizing radiation. The results of this research effort were the development of VHDL compatible models capable of rapid and accurate simulation of the effect of radiation on the timing performance of microelectronic circuits. The effects of radiation for total dose at 1 Mrad(Si) and dose rates up to 2 {times} 10{sup 12} rads(Si) per second were modeled for a variety of Separation by IMplantion of OXygen (SIMOX) circuits. In all cases tested, the VHDL simulations ran at least 600 times faster than SPICE while maintaining a timing accuracy to within 15% of SPICE values.

• OSTI ID: 203682
• Report Number(s): CONF-950716--
• Journal Information: IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 6Pt1 Vol. 42; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
DIGITAL SYSTEMS
MICROELECTRONIC CIRCUITS
PHYSICAL RADIATION EFFECTS
RADIATION DOSES
SIMULATORS
TIMING PROPERTIES