Low temperature deposition of diamond coatings on various substrates
Conference
·
OSTI ID:203507
- Univ. of Florida, Gainesville, FL (United States). Dept. of Materials Science and Engineering
The authors have used an electron cyclotron resonance (ECR) plasma system to deposit diamond films at substrate temperatures between 500 and 600 C. A methanol/hydrogen mixture was used as the source gas for deposition based on its inherent C/O atomic ratio. Silicon, sapphire, and stainless steel were evaluated as substrates for low temperature diamond growth.
- OSTI ID:
- 203507
- Report Number(s):
- CONF-950201--; ISBN 0-87339-317-1
- Country of Publication:
- United States
- Language:
- English
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