Plasma sources for electrons and ion beams

Journal Article · Mon Nov 01 00:00:00 EST 1999 · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena

DOI:https://doi.org/10.1116/1.591063· OSTI ID:20217895

Leung, Ka-Ngo ^[1]

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1. Lawrence Berkeley National Laboratory, University of California, Berkeley, California 94720 (United States)

Plasma devices are commonly used for the production of ion beams. It has been demonstrated that the multicusp generator can produce very low energy ion beams for ion projection lithography applications. The multicusp source has also found important applications in focused ion beam systems. With its high and uniform plasma density, attempts have been made to extract high brightness electron beams from this type of plasma source, making it also useful for electron beam lithography applications. (c) 1999 American Vacuum Society.

• OSTI ID: 20217895
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Vol. 17, Issue 6; Other Information: PBD: Nov 1999; ISSN 0734-211X
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
PLASMA DENSITY
ELECTRON BEAMS
ION BEAMS
FOCUSING
MICROELECTRONICS
BRIGHTNESS
ION SOURCES
PERMANENT MAGNETS
PLASMA RADIAL PROFILES