Plasma source for ion and electron beam lithography

Journal Article · Sun Nov 01 04:00:00 EST 1998 · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena

DOI:https://doi.org/10.1116/1.590460· OSTI ID:670204

Lee, Y; Gough, R A; Leung, K N; Vujic, J; Williams, M D; Zahir, N ^[1]; Fallman, W ^[2]; Tockler, M; Bruenger, W ^[3]

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1. Lawrence Berkeley National Laboratory, University of California, Berkeley, California (United States)
2. Technical University of Vienna, Vienna (Austria)
3. Fraunhofer Institute, Berlin (Germany)

A new plasma source configuration, coaxial source, has been developed at the Lawrence Berkeley National Laboratory suitable for ion and electron beam lithography applications. The axial ion energy spread and electron temperature of the multicusp ion source have been reduced considerably from 2 and 0.3 eV to a record low of 0.6 eV by employing a coaxial source arrangement. Results of ion projection lithographic exposure at the Fraunhofer Institute demonstrate that feature size less than 65 nm can be achieved by using a filter-equipped multicusp ion source. Langmuir probe measurements also show that very low energy spread electron beams can be obtained with the multicusp plasma generator. {copyright} {ital 1998 American Vacuum Society.}

• OSTI ID: 670204
• Report Number(s): CONF-9805132--
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena Journal Issue: 6 Vol. 16; ISSN JVTBD9; ISSN 0734-211X
• Country of Publication: United States
• Language: English

Related Subjects

66 PHYSICS
70 PLASMA PHYSICS AND FUSION TECHNOLOGY
DESIGN
ELECTRON BEAMS
ELECTRON SOURCES
ELECTRON TEMPERATURE
ION BEAMS
ION SOURCES
LAWRENCE BERKELEY LABORATORY
PLASMA
PLASMA PRODUCTION