Production of amorphous zones in GaAs by the direct impact of energetic heavy ions

Journal Article · Sat Jan 01 04:00:00 EST 2000 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.371825· OSTI ID:20217769

Bench, M W ^[1]; Robertson, I M ^[1]; Kirk, M A ^[2]; Jencic, I ^[3]

---

1. Department of Materials Science and Engineering, University of Illinois, Urbana, Illinois 61801 (United States)
2. Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States)
3. Institut Jozef Stefan, Jamova 39, 1000 Ljubljana, (Slovenia)

The damage produced in GaAs by implantation with low energy heavy ions has been studied as a function of ion mass and implantation temperature (30 and 300 K). The experiments were performed in situ in the microscope-accelerator facility at Argonne National Laboratory. In samples implanted and examined at 30 K, spatially isolated amorphous regions were produced by the direct impact of 50 keV Ar, Kr, and Xe ions. The probability that the impact of an individual ion formed an amorphous zone increased as the ion mass increased from Ar to Kr but not from Kr to Xe. The average dimension of the amorphous zones also increased with ion mass, being greater for the Xe than for the Kr ion implantation. On warming to room temperature, the amorphous zones decreased in size and density as the sample temperature was increased above 200 K. In samples implanted and examined at 300 K, the probability of forming an amorphous zone by direct impact increased as the ion mass increased from Kr to Xe, although the probability was always less than at 30 K. The density of amorphous zones produced at 300 K was similar to that remaining in a sample implanted at 30 K and then warmed to room temperature. With time at 300 K the amorphous zones decreased in size and eventually crystallized completely, leaving no trace of their prior existence. (c) 2000 American Institute of Physics.

• Research Organization: Argonne National Laboratory (ANL), Argonne, IL
• OSTI ID: 20217769
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 1 Vol. 87; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
AMORTIZATION
ANNEALING
ARGON IONS
EXPERIMENTAL DATA
GALLIUM ARSENIDES
HEAVY IONS
ION IMPLANTATION
KEV RANGE 10-100
KRYPTON IONS
TEMPERATURE DEPENDENCE
XENON IONS