Epitaxial growth of laminar crystalline silicon on CaF{sub 2}

Journal Article · Mon Aug 28 04:00:00 EDT 2000 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.1290158· OSTI ID:20217409

Schroeder, B R ^[1]; Meng, Shuang ^[1]; Bostwick, A ^[1]; Olmstead, Marjorie A ^[1]; Rotenberg, Eli ^[2]

---

1. Department of Physics, University of Washington, P.O. Box 351560, Seattle, Washington 98195 (United States)
2. MS 2-400, Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)

Si heteroepitaxy on CaF{sub 2} was studied with x-ray photoelectron spectroscopy and diffraction and low-energy electron diffraction to determine the interface bonding and silicon overlayer growth mode. The CaF{sub 2} surface was prepared by irradiation with low-energy electrons and exposure to arsenic, which replaced surface fluorine atoms with arsenic. Thin Si films (1.3 nm) were subsequently deposited at 550 degree sign C. The Si films completely cover the CaF{sub 2} substrate and have a type-B orientation. The resultant interface has Si-Ca bonds, with the As surfactant layer terminating the Si surface in a 1x1 structure. (c) 2000 American Institute of Physics.

• OSTI ID: 20217409
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 9 Vol. 77; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ARSENIC
BONDING
CALCIUM FLUORIDES
ELECTRON DIFFRACTION
EPITAXY
EXPERIMENTAL DATA
INTERFACES
PHOTOELECTRON SPECTROSCOPY
SILICON
SURFACTANTS
THIN FILMS