High breakdown voltage Au/Pt/GaN Schottky diodes

Journal Article · Sat Jul 01 00:00:00 EDT 2000 · Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films

DOI:https://doi.org/10.1116/1.582312· OSTI ID:20217045

Dang, G T ^[1]; Zhang, A P ^[1]; Mshewa, M M ^[1]; Ren, F ^[1]; Chyi, J -I ^[2]; Lee, C -M ^[2]; Chuo, C C ^[2]; Chi, G C ^[3]; Han, J ^[4]; Chu, S N. G. ^[5]

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1. Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611 (United States)
2. Department of Electrical Engineering, National Central University (Taiwan)
3. Department of Physics, National Central University (Taiwan)
4. Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
5. Bell Laboratories, Murray Hill, New Jersey 07974 (United States)

Au/Pt/GaN Schottky diode rectifiers were fabricated with reverse breakdown voltage (V{sub RB}) up to 550 V on vertically depleting structures and >2000 V on lateral devices. The figure-of-merit (V{sub RB}){sup 2}/R{sub ON}, where R{sub ON} is the on-state resistance, had values between 4.2 and 4.8 MW cm{sup -2}. The reverse leakage currents and forward on-voltages were still somewhat higher than the theoretical minimum values, but were comparable to SiC Schottky rectifiers reported in the literature. These devices show promise for use in ultrahigh-power switches. (c) 2000 American Vacuum Society.

• OSTI ID: 20217045
• Journal Information: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Vol. 18, Issue 4; Other Information: PBD: Jul 2000; ISSN 0734-2101
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SCHOTTKY BARRIER DIODES
BREAKDOWN
GOLD
PLATINUM
GALLIUM NITRIDES
SEMICONDUCTOR RECTIFIERS
LEAKAGE CURRENT
EXPERIMENTAL DATA