In-plane magnetophotoluminescence studies of modulation-doped GaAs/AlGaAs coupled double quantum wells

Journal Article · Mon Jul 17 00:00:00 EDT 2000 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.126985· OSTI ID:20217003

Kim, Yongmin ^[1]; Perry, C H ^[2]; Simmons, J A ^[3]; Klem, J F ^[3]

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1. National High Magnetic Field Laboratory-Los Alamos National Laboratory, Los Alamos, New Mexico 87545 and Quantum-Functional Semiconductor Research Center, Dongguk University, Seoul, (Korea, Republic of)
2. Department of Physics, Northeastern University, Boston, Massachusetts 02115 (United States)
3. Sandia National Laboratory, Albuquerque, New Mexico 87185 (United States)

In-plane magnetic-field photoluminescence spectra from a series of n-type modulation-doped GaAs/Al{sub 0.3}Ga{sub 0.7}As coupled double quantum wells show distinctive doublet structures related to the tunnel-split ground sublevel states. The magnetic-field behavior of the upper transition from the antisymmetric state strongly depends on sample mobility. In a lower mobility sample, the transition energy displays an N-type kink with field (namely, a maximum followed by a minimum), whereas higher mobility samples have a linear dependence. The former is attributed to a coupling mechanism due to homogeneous broadening of the electron and hole states. The results are in good agreement with recent theoretical calculations. (c) 2000 American Institute of Physics.

• OSTI ID: 20217003
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 3 Vol. 77; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM ARSENIDES
CARRIER MOBILITY
EXPERIMENTAL DATA
GALLIUM ARSENIDES
MAGNETIC FIELDS
PHOTOLUMINESCENCE
SEMICONDUCTOR JUNCTIONS