Silicon monolithic microchannel-cooled laser diode array

Journal Article · Mon Jul 03 00:00:00 EDT 2000 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.126860· OSTI ID:20216992

Skidmore, J A ^[1]; Freitas, B L ^[1]; Crawford, J ^[1]; Satariano, J ^[1]; Utterback, E ^[1]; DiMercurio, L ^[1]; Cutter, K ^[1]; Sutton, S ^[1]

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1. Lawrence Livermore National Laboratory, P.O. Box 808, L-482, Livermore, California 94551 (United States)

A monolithic microchannel-cooled laser diode array is demonstrated that allows multiple diode-bar mounting with negligible thermal cross talk. The heat sink comprises two main components: a wet-etched Si layer that is anodically bonded to a machined glass block. The continuous wave (cw) thermal resistance of the 10 bar diode array is 0.032 degree sign C/W, which matches the performance of discrete microchannel-cooled arrays. Up to 1.5 kW/cm{sup 2} is achieved cw at an emission wavelength of {approx}808 nm. Collimation of a diode array using a monolithic lens frame produced a 7.5 mrad divergence angle by a single active alignment. This diode array offers high average power/brightness in a simple, rugged, scalable architecture that is suitable for large two-dimensional areas. (c) 2000 American Institute of Physics.

• OSTI ID: 20216992
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 1 Vol. 77; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
BRIGHTNESS
COLLIMATORS
ETCHING
EXPERIMENTAL DATA
LENSES
PERFORMANCE
SEMICONDUCTOR LASERS
SILICON DIODES