Hydrogen-assisted pulsed-laser deposition of (001)CeO{sub 2} on (001) Ge
- Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6056 (United States)
The growth of epitaxial (001)CeO{sub 2} on a (001) Ge surface using a hydrogen-assisted pulsed-laser deposition method is reported. Hydrogen gas is introduced during film growth in order to reduce or eliminate the presence of the GeO{sub 2} from the semiconductor surface during the initial nucleation of the metal-oxide film. The hydrogen partial pressure and substrate temperature are selected to be sufficiently high such that the germanium native oxides are thermodynamically unstable. The Gibbs free energy of CeO{sub 2} is larger in magnitude than that of the Ge native oxides, making it more favorable for the metal-oxide to reside at the interface in comparison to the native Ge oxides. By satisfying these criteria, the metal-oxide/semiconductor interface is shown to be atomically abrupt with no native oxide present. (c) 2000 American Institute of Physics.
- OSTI ID:
- 20215692
- Journal Information:
- Applied Physics Letters, Vol. 76, Issue 13; Other Information: PBD: 27 Mar 2000; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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