Inelastic X-ray scattering from 6H-SiC

Technical Report · Sat Jul 01 04:00:00 EDT 1995

DOI:https://doi.org/10.2172/201761· OSTI ID:201761

Macrander, A T; Blasdell, B ^[1]; Montano, P A ^[2]; Kao, C C ^[3]

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1. Argonne National Lab., IL (United States). Advanced Photon Source
2. Argonne National Lab., IL (United States). Material Science Div.
3. Brookhaven National Lab., Upton, NY (United States). National Synchrotron Light Source

The authors have studied electronic excitations in 6H-SiC using inelastic x-ray scattering. Inelastic scattering spectra were measured at momentum transfers ranging from 0.47 {angstrom}{sup {minus}1} to 2.00 {angstrom}{sup {minus}1} along the c-axis in the hexagonal lattice, i.e. , along [00{center_dot}1], and from 0.67 {angstrom}{sup {minus}1} to 2.00 {angstrom}{sup {minus}1} along the a-axis, i.e., alone, [10{center_dot}0]. Comparison of the two sets of data reveals an orientation dependence of the spectra, except for a characteristic peak at 22--23 eV that occurs for both directions at low Q. This peak has also been observed in electron energy loss spectroscopy studies and is identified as a bulk plasmon. The orientation dependence of the other spectral features is indicative of band structure effects. These data were obtained using a Ge(444) analyzer in a near backscattering geometry.

• Research Organization: Argonne National Lab., IL (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: W-31109-ENG-38
• OSTI ID: 201761
• Report Number(s): ANL/XFD/CP--86585; CONF-951007--15; ON: DE96005208
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
66 PHYSICS
COMPARATIVE EVALUATIONS
DIAGNOSTIC TECHNIQUES
ELECTRONIC STRUCTURE
EXPERIMENTAL DATA
INELASTIC SCATTERING
SEMICONDUCTOR MATERIALS
SILICON CARBIDES
SYNCHROTRON RADIATION
X RADIATION