Electron cyclotron resonance plasma etching of native TiO{sub 2} on TiN
Journal Article
·
· Journal of the Electrochemical Society
- Varian Associates, Palo Alto, CA (United States). Edward L. Ginzton Research Center
Thin-film polycrystalline Tin with an approximate 2 nm thick native TiO{sub 2} overlayer is bombarded with 50 to 200 eV Ar ions in an electron cyclotron resonance plasma. In situ X-ray photoelectron spectroscopy and static secondary ion mass spectrometry suggest complete removal of oxygen from the planar surface, independent of ion energy, with TiO{sub 2} remaining on the columnar grain boundaries. The TiN etching rate increases from 6 to 14 nm/min as the ion energy is raised from 100 to 200 eV. The TiN stoichiometry does not change with ion bombardment.
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 201407
- Journal Information:
- Journal of the Electrochemical Society, Journal Name: Journal of the Electrochemical Society Journal Issue: 1 Vol. 143; ISSN JESOAN; ISSN 0013-4651
- Country of Publication:
- United States
- Language:
- English
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