Long-term stability of microcrystalline silicon p-i-n solar cells exposed to sun light
Conference
·
OSTI ID:20107959
The performance of an entirely microcrystalline p-i-n solar cell was monitored during a long-term outdoor test in Lisbon starting in September 1998. A small decrease of the short circuit current was observed after 5 months of operation. The open-circuit voltage remained stable around 400 mV. From the analysis of the I-V characteristic in dark and under illumination they could identify the weak points of the test structure, like large series resistance, high recombination rate, and intensity-dependent collection efficiency.
- Research Organization:
- Inst. Superior Tecnico IST, Lisbon (PT)
- OSTI ID:
- 20107959
- Resource Relation:
- Conference: 1999 Materials Research Society Spring Meeting, San Francisco, CA (US), 04/05/1999--04/09/1999; Other Information: PBD: 1999; Related Information: In: Amorphous and heterogeneous silicon thin films: Fundamentals to devices -- 1999. Materials Research Society symposium proceedings: Volume 557, by Branz, H.M.; Collins, R.W.; Okamoto, Hiroaki; Guha, S.; Schropp, R. [eds.], 908 pages.
- Country of Publication:
- United States
- Language:
- English
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