Structure and optoelectronic properties as a function of hydrogen dilution of micro-crystalline silicon films prepared by hot wire chemical vapor deposition

Conference · Thu Jul 01 04:00:00 EDT 1999

OSTI ID:20107947

Yue, G; Lin, J; Wang, Q; Han, D

Films prepared by hot wire CVD using H dilution ratio, R=H{sub 2}/SiH{sub 4}, from 1 to 20 were studied by X-ray, Raman, PL, and conductivity measurements. The authors found that (a) when the dilution ratio reached R = 3, the structure transition from amorphous to microcrystalline growth occurred; meanwhile, PL spectrum showed a dual-peak at 1.3 and 1.0 eV; (b) the total intensity, band width, and peak position of the low energy PL band decreased with increasing H dilution; (c) both the Raman and PL measured from the transparent substrate side showed that initial growth tends to be amorphous and a portion of {micro}c-Si was formed when R {ge} 5; and (d) the conductivity activation energy first decreased from 0.68 to 0.15 eV when the film transition from a- to {micro}c-Si; then increased slightly with increasing {micro}c-Si fraction. The results demonstrate that the variation of the H-dilution ratio has significant effects on both the film structures and the optoelectric properties.

• Research Organization: Univ. of North Carolina, Chapel Hill, NC (US)
• Sponsoring Organization: US National Science Foundation; Chinese Educational Fellowship; US Department of Energy
• DOE Contract Number: AC02-83CH10093
• OSTI ID: 20107947
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHEMICAL VAPOR DEPOSITION
CRYSTAL STRUCTURE
ELECTRICAL PROPERTIES
HYDROGEN ADDITIONS
MICROSTRUCTURE
OPTICAL PROPERTIES