Photoluminescence and Raman studies in thin-film materials: Transition from amorphous to microcrystalline silicon

Journal Article · Thu Jul 01 04:00:00 EDT 1999 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.124426· OSTI ID:355426

Yue, G; Lorentzen, J D; Lin, J; Han, D ^[1]; Wang, Q ^[2]

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1. Department of Physics Astronomy, University of North Carolina at Chapel Hill, Chapel Hill, North Carolina 27599-3255 (United States)
2. National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)

We measured photoluminescence (PL) and Raman spectra for films deposited by hot-wire chemical vapor deposition using various hydrogen to silane ratios. We observed: (a) a PL peak energy increase from 1.25 to 1.4 eV as the material approaches the {ital a}- to {mu}c-Si transition region; (b) a dual-PL peak at 1.3 and 1.0 eV for the film with a H dilution ratio of 3; and (c) as the H ratio increases, the 1.3 eV PL fades away and the low energy PL dominates. Meanwhile, a redshift of the peak position, a decrease of the intensity, and a narrower bandwidth for the low energy PL are also observed. The low energy PL is explained by band-tail radiative transitions from two types of grain boundaries. {copyright} {ital 1999 American Institute of Physics.}

• OSTI ID: 355426
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 4 Vol. 75; ISSN 0003-6951; ISSN APPLAB
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AMORPHOUS STATE
CHEMICAL VAPOR DEPOSITION
CRYSTALLIZATION
DIFFUSION
GRAIN BOUNDARIES
HYDROGEN
PHOTOLUMINESCENCE
RAMAN SPECTRA
SILICON
THIN FILMS