Hydrogen transport in phosphorus and boron doped polycrystalline silicon
Conference
·
OSTI ID:20107918
Hydrogen diffusion in phosphorus and boron doped polycrystalline silicon was investigated by deuterium diffusion experiments. The presence of dopants enhances hydrogen diffusion. The effective diffusion coefficient D{sub eff} is thermally activated and the activation energy varies between 0.1 and 0.4 eV. This is accompanied by a variation of the diffusion prefactor by 12 orders of magnitude. Using the theoretical diffusion prefactor the actual energy {bar E}{sub A} was calculated from D{sub eff}. {bar E}{sub A} also depends strongly on the Fermi energy and exhibits a similar dependence as the formation energies of H{sup +} and H{sup {minus}} in single crystal silicon.
- Research Organization:
- Hahn-Meitner-Inst. Berlin (DE)
- OSTI ID:
- 20107918
- Country of Publication:
- United States
- Language:
- English
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