Amorphous and heterogeneous silicon thin films: Fundamentals to devices -- 1999. Materials Research Society symposium proceedings: Volume 557
Conference
·
OSTI ID:20107878
- eds.
This volume is divided into the following parts: (1) Growth and Properties; (2) High-Rate Deposition; (3) Recrystallization, Amorphization and Porous Silicon; (4) Ordering and Hydrogen; (5) Metastability; (6) Defects, Band Tails and Transport; (7) Heterogeneous Materials and Devices; (8) Thin-Film Transistors and Displays; (9) Solar Cells; and (10) Detectors, Imagers and Other Devices. Separate abstracts were prepared for most papers in this volume.
- OSTI ID:
- 20107878
- Country of Publication:
- United States
- Language:
- English
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